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DTA114EET1G - onsemi

Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416

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DTA114EET1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC−75/SOT−416 CASE 463−01 ISSUE G
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DTA114EET1G - onsemi  - 3D model - SOT23 (3-Pin) - SC−75/SOT−416 CASE 463−01 ISSUE G
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DTA114EET1G Details

  • Manufacturer Part Number:

    DTA114EET1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-75 (SOT-416) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    463-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DTA114EET1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a large copper area to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (–40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, ensure that the device is not exposed to thermal shocks or rapid temperature changes.
  • The DTA114EET1G has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the DTA114EET1G is suitable for high-reliability applications. It is manufactured using a high-reliability process, and it has undergone rigorous testing to ensure its reliability. However, it is still important to follow proper design and manufacturing practices to ensure the reliability of the final product.
  • Start by checking the device's operating conditions, such as voltage and temperature. Verify that the device is properly soldered and that there are no signs of physical damage. Use a oscilloscope or logic analyzer to check the device's output and input signals. If the issue persists, consult the datasheet and application notes, or contact onsemi's technical support team for further assistance.

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DTA114EET1G Overview

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Part Image DTA114EET1 Motorola Semiconductor Products

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Part Image DTA114EET1 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon