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DTB114ECT116 - ROHM Semiconductor

Description: PNP, SOT-23, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor)

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DTB114ECT116 - ROHM Semiconductor PCB footprint - Other - Other - DTB114ECT116-4
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DTB114ECT116 - ROHM Semiconductor  - 3D model - Other - DTB114ECT116-4
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DTB114ECT116 Details

  • Manufacturer Part Number:

    DTB114ECT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MINIMOLD, SST, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    56

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • VCEsat-Max:

    0.3 V

DTB114ECT116 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range (Ta = -40°C to 125°C) and consider the device's power dissipation. Implement thermal management techniques, such as heat sinks or thermal interfaces, to keep the junction temperature (Tj) below the maximum rating (150°C).
  • ROHM recommends using a low-ESR ceramic capacitor (X5R or X7R dielectric) with a value between 1uF to 10uF, depending on the specific application requirements. The input capacitor should be placed as close as possible to the VIN pin to minimize noise and ensure stable operation.
  • To prevent EOS and ESD damage, follow proper handling and assembly procedures. Use ESD-protective equipment, such as wrist straps and mats, during handling and assembly. Ensure that the device is powered down during assembly and testing, and avoid applying voltage or current exceeding the recommended maximum ratings.
  • ROHM recommends using a low-ESR ceramic capacitor (X5R or X7R dielectric) with a value between 1uF to 10uF, depending on the specific application requirements. The output capacitor should be placed as close as possible to the VOUT pin to minimize noise and ensure stable operation.

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DTB114ECT116 Overview

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