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EDB4432BBBJ-1D-F-D - Micron

Description: IC DRAM 4GBIT PARALLEL 134FBGA

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EDB4432BBBJ-1D-F-D - Micron PCB footprint - BGA - BGA - 134-Ball FBGA (10mm x 11.5mm x 0.75mm)
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EDB4432BBBJ-1D-F-D - Micron  - 3D model - BGA - 134-Ball FBGA (10mm x 11.5mm x 0.75mm)
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EDB4432BBBJ-1D-F-D Details

  • Manufacturer Part Number:

    EDB4432BBBJ-1D-F-D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    WFBGA-134

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Date Of Intro:

    2016-08-29

  • Manufacturer:

    Micron Technology Inc

  • YTEOL:

    0

  • Access Mode:

    SINGLE BANK PAGE BURST

  • Additional Feature:

    AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

  • JESD-30 Code:

    R-PBGA-B134

  • Length:

    11.5 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    LPDDR2 DRAM

  • Memory Width:

    32

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    134

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    SYNCHRONOUS

  • Organization:

    128MX32

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Seated Height-Max:

    0.75 mm

  • Self Refresh:

    YES

  • Supply Voltage-Max (Vsup):

    1.3 V

  • Supply Voltage-Min (Vsup):

    1.14 V

  • Supply Voltage-Nom (Vsup):

    1.2 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    BOTTOM

  • Width:

    10 mm

EDB4432BBBJ-1D-F-D Frequently Asked Questions (FAQs)

  • For optimal signal integrity, it's recommended to follow Micron's PCB layout guidelines, which include using a 4-layer PCB with a solid ground plane, keeping signal traces short and direct, and using 50-ohm impedance-controlled traces. Additionally, it's essential to minimize vias and use them only when necessary.
  • To handle thermal management, ensure good airflow around the component, and consider using a heat sink or thermal interface material if the operating temperature exceeds 85°C. Also, follow Micron's recommended thermal design guidelines for DDR3 SDRAM.
  • The timing requirements for clock, command, and data signals can be found in the DDR3 SDRAM specification (JESD79-3E). Ensure that your design meets the specified timing requirements for clock frequency, clock-to-command latency, and data strobe latency.
  • Implement a power management scheme that provides a stable 1.5V supply to the DDR3 SDRAM. Use a voltage regulator that meets the specified voltage tolerance and output current requirements. Ensure that the power supply can handle the maximum current requirements during device operation.
  • For signal termination and impedance matching, follow the DDR3 SDRAM specification (JESD79-3E) and Micron's application notes. Ensure that the signal traces are impedance-matched to 50 ohms, and use series terminations (Rs) and parallel terminations (Rt) as specified in the datasheet.

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