EDW4032BABG-60-F-D footprint, schematic symbol and 3D model by Micron

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EDW4032BABG-60-F-D Details

Manufacturer Part Number:
EDW4032BABG-60-F-D
Part Life Cycle Code:
Obsolete
Package Description:
FBGA-170
ECCN Code:
EAR99
HTS Code:
8542.32.00.36
Manufacturer:
Micron Technology Inc
YTEOL:
0
Access Mode:
MULTI BANK PAGE BURST
Additional Feature:
AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY
I/O Type:
COMMON
Interleaved Burst Length:
8
JESD-30 Code:
R-PBGA-B170
Length:
14 mm
Memory Density:
4294967296 bit
Memory IC Type:
SYNCHRONOUS GRAPHICS RAM
Memory Width:
32
Number of Functions:
1
Number of Ports:
1
Number of Terminals:
170
Number of Words:
134217728 words
Number of Words Code:
128000000
Operating Mode:
SYNCHRONOUS
Operating Temperature-Max:
95 °C
Organization:
128MX32
Output Characteristics:
3-STATE
Package Body Material:
PLASTIC/EPOXY
Package Code:
TFBGA
Package Equivalence Code:
BGA170,14X17,32
Package Shape:
RECTANGULAR
Package Style:
GRID ARRAY, THIN PROFILE, FINE PITCH
Refresh Cycles:
8192
Seated Height-Max:
1.2 mm
Self Refresh:
YES
Sequential Burst Length:
8
Supply Voltage-Max (Vsup):
1.3905 V
Supply Voltage-Min (Vsup):
1.3095 V
Supply Voltage-Nom (Vsup):
1.35 V
Surface Mount:
YES
Technology:
CMOS
Terminal Form:
BALL
Terminal Pitch:
0.8 mm
Terminal Position:
BOTTOM
Width:
12 mm

The maximum operating temperature range for EDW4032BABG-60-F-D is 0°C to 85°C.
To ensure signal integrity, use a signal integrity analysis tool to simulate the signal behavior and optimize the PCB design. Additionally, follow the PCB design guidelines provided by Micron Technology Inc.
The recommended refresh rate for EDW4032BABG-60-F-D is 8192 refreshes per second, with a refresh interval of 7.8 microseconds.
No, EDW4032BABG-60-F-D is designed to operate at a voltage supply of 1.5V, and using it with a different voltage supply may damage the device or affect its performance.
Implement an error detection and correction mechanism, such as ECC (Error-Correcting Code), to detect and correct errors. For retries, implement a retry mechanism that follows the JEDEC standard for DDR3 SDRAM.

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