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F4-23MR12W1M1P_B11 - Infineon

Description: IGBT Module Trench Full Bridge 1200V 50A 20mW Chassis Mount AG-EASY1B-2

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F4-23MR12W1M1P_B11 - Infineon PCB footprint - Other - Other - F4-23MR12W1M1P_B11-6
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F4-23MR12W1M1P_B11 - Infineon  - 3D model - Other - F4-23MR12W1M1P_B11-6
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F4-23MR12W1M1P_B11 Details

  • Manufacturer Part Number:

    F4-23MR12W1M1P_B11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MODULE-16

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JESD-30 Code:

    R-XUFM-X16

  • Number of Elements:

    4

  • Number of Terminals:

    16

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.02 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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F4-23MR12W1M1P_B11 Overview

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