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FCP16N60N - onsemi

Description: Obsolete - Power MOSFET, N-Channel, SUPREMOS, FAST, 600 V, 16 A, 199 mΩ, TO-220

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PCB Footprints
FCP16N60N - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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3D Models
FCP16N60N - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3-Lead, Jedec Variation AB
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FCP16N60N Details

  • Manufacturer Part Number:

    FCP16N60N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    355 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.199 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    134.4 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    181 ns

  • Turn-on Time-Max (ton):

    82.6 ns

FCP16N60N Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCP16N60N is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by attaching a heat sink to the device, ensuring good thermal contact, and providing adequate airflow. The thermal resistance of the heat sink and the thermal interface material should be minimized.
  • The recommended gate drive voltage for the FCP16N60N is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • To protect the FCP16N60N from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.
  • A good PCB layout for the FCP16N60N should minimize parasitic inductance and capacitance, keep the gate drive traces short and wide, and ensure good thermal conductivity. A 2-layer or 4-layer PCB with a solid ground plane is recommended.

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FCP16N60N Overview

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Part Image NTP185N60S5H onsemi

Power Field-Effect Transistor, 15A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FCP16N60N-F102 onsemi

Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB