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FCPF11N60 - onsemi

Description: Power MOSFET, N Channel, 600 V, 11 A, 0.38 ohm, TO-220F, Through Hole

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FCPF11N60 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack,3−Lead / TO−220F−3SG CASE 221AT ISSUE B
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3D Models
FCPF11N60 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 Fullpack,3−Lead / TO−220F−3SG CASE 221AT ISSUE B
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FCPF11N60
  • Part Number FCPF11N60
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack,3−Lead / TO−220F−3SG CASE 221AT ISSUE B
  • Released Date Aug 31, 2025
  • Last Modified Date Aug 31, 2025 10:35 AM UTC
  • Pinout / Pin List Click Here (Member Only)

FCPF11N60 Details

  • Manufacturer Part Number:

    FCPF11N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF11N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCPF11N60 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the heat sink should be mounted using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Proper airflow and a clean, dust-free environment are also essential for effective cooling.
  • The recommended gate drive voltage for the FCPF11N60 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.
  • Yes, the FCPF11N60 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation. A proper gate drive circuit and thermal management are crucial in such applications.
  • To protect the FCPF11N60 from overvoltage and overcurrent, a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit should be implemented. The OVP circuit should be designed to clamp the voltage to a safe level, while the OCP circuit should be designed to limit the current to a safe value.

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FCPF11N60 Overview

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Part Image FCPF11N60 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB