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FCPF125N65S3 - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 44 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF); Optimized Capacitance; Internal Gate Resistance: 4 ohm; Typ. RDS(on) = 105 mΩ; 100% Avalanche Tested; RoHS Compliant

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PCB Footprints
FCPF125N65S3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT
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3D Models
FCPF125N65S3 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FCPF125N65S3
  • Part Number FCPF125N65S3
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT
  • Released Date Mar 16, 2018
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FCPF125N65S3 Details

  • Manufacturer Part Number:

    FCPF125N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-05-12

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF125N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FCPF125N65S3 is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 2.5V to 10V. Additionally, ensure the drain-source voltage (Vds) is within the recommended range of 0V to 650V.
  • For optimal thermal management, it's recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Additionally, ensure good airflow around the device and consider using a heat sink if the device will be operating at high temperatures or high power levels.
  • To protect the FCPF125N65S3 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection devices such as TVS diodes or ESD arrays.
  • The recommended gate resistor value for the FCPF125N65S3 is typically in the range of 10Ω to 100Ω. However, the optimal value depends on the specific application and switching frequency. It's recommended to consult the application note or contact onsemi support for more information.

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FCPF125N65S3 Overview

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