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FCPF190N60 - onsemi

Description: 650V @TJ = 150°C; Max. RDS(on) = 199mΩ; 100% avalanche tested; Low effective output capacitance ( Typ. Coss.eff = 160pF ); Ultra low gate charge ( Typ. Qg = 57nC )

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PCB Footprints
FCPF190N60 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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FCPF190N60 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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FCPF190N60 Details

  • Manufacturer Part Number:

    FCPF190N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20.2 A

  • Drain-source On Resistance-Max:

    0.199 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    60.6 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF190N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCPF190N60 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. A thermal interface material (TIM) can also be used to improve heat transfer.
  • The recommended gate drive voltage for the FCPF190N60 is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can improve switching speed, but may also increase power consumption.
  • To protect the FCPF190N60 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and a current sense resistor or a fuse to detect and interrupt overcurrent conditions.
  • A good PCB layout for the FCPF190N60 should minimize parasitic inductance and capacitance, keep high-frequency signals away from sensitive nodes, and use a solid ground plane to reduce electromagnetic interference (EMI).

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FCPF190N60 Overview

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Part Image FCPF190N60_F152 onsemi

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FCPF190N60-F152 onsemi

N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ, TO-220-3 FullPak, 1000-TUBE