FCPF190N65FL1-F154 footprint, schematic symbol and 3D model by onsemi

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PCB Footprints

FCPF190N65FL1-F154 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 FULLPACK, 3−LEAD CASE 221BN ISSUE O

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Datasheet Download Datasheet
Stock & Prices Price & Stock for FCPF190N65FL1-F154
Part Number FCPF190N65FL1-F154
Manufacturer onsemi
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - TO−220 FULLPACK, 3−LEAD CASE 221BN ISSUE O
Released Date Aug 3, 2026
Pinout / Pin List Click Here (Member Only)

FCPF190N65FL1-F154 Details

Manufacturer Part Number:
FCPF190N65FL1-F154
Brand Name:
onsemi
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Part Package Code:
TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)
Package Description:
TO-220F, 3 PIN
Manufacturer Package Code:
221BN
ECCN Code:
EAR99
Date Of Intro:
2020-12-09
Manufacturer:
onsemi
YTEOL:
3
Avalanche Energy Rating (Eas):
400 mJ
Case Connection:
ISOLATED
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
20.6 A
Drain-source On Resistance-Max:
0.19 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
0.68 pF
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
39 W
Pulsed Drain Current-Max (IDM):
61.8 A
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
152 ns
Turn-on Time-Max (ton):
92 ns

FCPF190N65FL1-F154 Frequently Asked Questions (FAQs)

The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the thermal relief pattern.
To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including using a heat sink, ensuring good thermal interface material (TIM) between the device and heat sink, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
The critical parameters to monitor during operation to prevent premature failure include the junction temperature (Tj), drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id). It's also essential to monitor the device for any signs of overheating, such as excessive temperature rise or unusual current behavior.
When selecting a gate driver for the FCPF190N65FL1-F154, consider the device's gate charge requirements, the desired switching frequency, and the available power supply voltage. A gate driver with a high current capability, fast rise and fall times, and a suitable input voltage range is recommended.
To prevent electrostatic discharge (ESD) damage, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging and materials, and implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design.

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FCPF190N65FL1-F154 Overview

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