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FCPF190N65S3L1 - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 17 A, 190 mΩ, TO-220F

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FCPF190N65S3L1 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 FULLPAK 3LD/*
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FCPF190N65S3L1 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 FULLPAK 3LD/*
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FCPF190N65S3L1 Details

  • Manufacturer Part Number:

    FCPF190N65S3L1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    340BF

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    2017-03-31

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    76 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF190N65S3L1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FCPF190N65S3L1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good thermal contact between the device and the heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FCPF190N65S3L1 is between 10V and 15V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, the FCPF190N65S3L1 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to ensure proper PCB layout, decoupling, and gate drive design to minimize losses and ringing.
  • To protect the FCPF190N65S3L1 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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