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FCPF600N65S3R0L - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, SUPREMOS, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F

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FCPF600N65S3R0L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 FULLPAK 3LD CASE 340BF ISSUE O
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FCPF600N65S3R0L - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 FULLPAK 3LD CASE 340BF ISSUE O
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FCPF600N65S3R0L Details

  • Manufacturer Part Number:

    FCPF600N65S3R0L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    340BF

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF600N65S3R0L Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FCPF600N65S3R0L is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to prevent hot spots.
  • The recommended gate drive voltage for the FCPF600N65S3R0L is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress and reduce the device's lifespan.
  • Yes, the FCPF600N65S3R0L can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.
  • A good PCB layout for the FCPF600N65S3R0L should minimize the parasitic inductance and resistance of the power loop. This can be achieved by using a compact layout, keeping the power traces short and wide, and using a solid ground plane. Additionally, ensure that the gate drive signal traces are separated from the power traces to prevent noise coupling.

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FCPF600N65S3R0L Overview

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Part Image FCPF600N65S3R0L-F154 onsemi

Power Field-Effect Transistor, 6A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB