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FD200R12KE3 - Infineon

Description: IGBT Modules 1200V 200A CHOPPER

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FD200R12KE3 - Infineon  - 3D model
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FD200R12KE3 Details

  • Manufacturer Part Number:

    FD200R12KE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    5

  • Country Of Origin:

    Austria, Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Qualification Status:

    Not Qualified

FD200R12KE3 Frequently Asked Questions (FAQs)

  • The maximum allowed junction temperature for the FD200R12KE3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the FD200R12KE3 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 22 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon support for specific guidance.
  • Yes, the FD200R12KE3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the application note or contact Infineon support for specific guidance on parallel configuration.
  • The recommended dead time for the FD200R12KE3 depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is suitable for most applications. However, it's recommended to consult the application note or contact Infineon support for specific guidance on dead time optimization.

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FD200R12KE3 Overview

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Part Image FD200R12KE3HOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel