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FDB3652 - onsemi

Description: Low Miller Charge ; rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A ; Qg(tot) = 41nC (Typ.), VGS = 10V ; Low Qrr Body Diode ; UIS Capability (Single Pulse and Repetitive Pulse)

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PCB Footprints
FDB3652 - onsemi PCB footprint - Other - Other - TO-263 2L (D2PAK)_2022
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FDB3652 Details

  • Manufacturer Part Number:

    FDB3652

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3 PIN

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    182 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB3652 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range.
  • Monitor the device's current (IOUT), voltage (VOUT), and temperature (TJ). Implement overcurrent protection (OCP), undervoltage protection (UVP), and overtemperature protection (OTP) to prevent damage.
  • Consult the application note and reference design provided by onsemi. Perform thorough simulations and testing to optimize the device's performance for your specific use case.
  • Follow standard ESD handling procedures, including the use of ESD-safe workstations, wrist straps, and packaging materials. Ensure all personnel handling the device are properly trained and equipped.

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FDB3652 Overview

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Image Part Number Model
Part Image FDB3652 Rochester Electronics LLC

9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

Part Image FDB3652_F085 onsemi

100V, 61A, 14mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL