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FDB8443 - onsemi

Description: Low Miller Charge, QGD = 32nC ( Typ.); RDS(on) = 2.3mΩ ( Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 142nC ( Typ.); UIS Capability (Single Pulse and Repetitive Pulse); Qualified to AEC Q101 ; RoHS Compliant

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PCB Footprints
FDB8443 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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3D Models
FDB8443 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB8443 Details

  • Manufacturer Part Number:

    FDB8443

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    531 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB8443 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the FDB8443 package, using a solid ground plane, and keeping the thermal traces as short and wide as possible. A 4-layer PCB with a dedicated thermal layer is also recommended.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. Also, use a stable voltage source, and decouple the input and output pins with suitable capacitors to minimize noise and oscillations.
  • Critical parameters to monitor during FDB8443 operation include junction temperature, input and output voltage, current, and power dissipation. Monitoring these parameters can help prevent overheating, overvoltage, and overcurrent conditions that can damage the device.
  • To protect the FDB8443 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors on the input and output pins.
  • Recommended soldering and assembly techniques for the FDB8443 include using a soldering iron with a temperature-controlled tip, applying a small amount of solder paste, and using a reflow oven or hot air soldering technique to minimize thermal stress on the device.

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FDB8443 Overview

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Image Part Number Model
Part Image FDB8443_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 25A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB