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FDB8896 - onsemi

Description: N-Channel 30 V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount TO-263 (D2PAK)

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PCB Footprints
FDB8896 - onsemi PCB footprint - Other - Other - D2PAK−3(TO−263, 3−LEAD) CASE 418AJ ISSUE F
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FDB8896 Details

  • Manufacturer Part Number:

    FDB8896

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3/2 PIN

  • Manufacturer Package Code:

    418AJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB8896 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum allowed current through the output pins is 1.5A per pin. Exceeding this limit may cause damage to the device.
  • Use a voltage supervisor or a voltage monitor to detect overvoltage and undervoltage conditions. Implement a power-on reset (POR) circuit to ensure the device is properly reset during power-up.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode with a voltage rating higher than the maximum input voltage to protect the device from ESD events.

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FDB8896 Overview

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FDB8896 Alternates

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Part Image FDB8896 Rochester Electronics LLC

80A, 30V, 0.0068ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

Part Image FDB7042L Rochester Electronics LLC

50A, 30V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3

Part Image ISL9N306AS3ST Rochester Electronics LLC

75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Image ISL9N306AS3ST Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image ISL9N306AS3ST_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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