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FDBL0065N40 - onsemi

Description: UIS Capability ; Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A ; Typical RDS(on) = 0.5 mΩ at VGS = 10V, ID = 80 A ; RoHS Compliant

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FDBL0065N40 - onsemi PCB footprint - Other - Other - FDBL0065N40
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FDBL0065N40 - onsemi  - 3D model - Other - FDBL0065N40
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FDBL0065N40 Details

  • Manufacturer Part Number:

    FDBL0065N40

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1064 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.00065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDBL0065N40 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to improve heat dissipation.
  • The device requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. A voltage regulator or a zener diode can be used to regulate the bias voltage.
  • The maximum allowable power dissipation for the FDBL0065N40 is 2.5W. Exceeding this limit can cause the device to overheat and reduce its lifespan.
  • The device is sensitive to ESD, so it's essential to handle it with an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or tube to prevent ESD damage.
  • The FDBL0065N40 is designed to operate at frequencies up to 1 GHz. However, the optimal operating frequency range depends on the specific application and circuit design.

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FDBL0065N40 Overview

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