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FDBL0150N60 - onsemi

Description: UIS Capability ; Typical RDS(on) = 1.2 mΩ at VGS = 10V, ID = 80 A; RoHS Compliant ; Typical Qg(tot) = 150 nC at VGS = 10V, ID = 80 A

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FDBL0150N60 - onsemi PCB footprint - Other - Other - FDBL0150N60-2
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FDBL0150N60 - onsemi  - 3D model - Other - FDBL0150N60-2
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FDBL0150N60 Details

  • Manufacturer Part Number:

    FDBL0150N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    614 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDBL0150N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FDBL0150N60 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. A thermal interface material (TIM) can also be used to improve heat transfer.
  • The recommended gate drive voltage for the FDBL0150N60 is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FDBL0150N60 can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are matched and that the gate drive signals are properly synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating of the FDBL0150N60 is 10 kV/μs, which means it can withstand a voltage change of up to 10 kV in 1 microsecond.

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FDBL0150N60 Overview

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