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FDBL0210N80 - onsemi

Description: RoHS Compliant ; Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A ; UIS Capability ; Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A

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FDBL0210N80 - onsemi  - 3D model
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FDBL0210N80 Details

  • Manufacturer Part Number:

    FDBL0210N80

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    512 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDBL0210N80 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDBL0210N80 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FDBL0210N80 is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the FDBL0210N80 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and the gate drive signals are synchronized.
  • The maximum allowable voltage transient for the FDBL0210N80 is 120% of the maximum rated voltage (800V). However, it's recommended to keep the voltage transients as low as possible to ensure reliable operation.

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FDBL0210N80 Overview

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