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FDBL9401-F085T6 - onsemi

Description: Low RDS(on); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant; Small Footprint (TOLL) for Compact Design

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FDBL9401-F085T6 - onsemi PCB footprint - Other - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE B
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FDBL9401-F085T6 - onsemi  - 3D model - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE B
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FDBL9401-F085T6 Details

  • Manufacturer Part Number:

    FDBL9401-F085T6

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1012 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.00067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    177 pF

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180.7 W

  • Pulsed Drain Current-Max (IDM):

    2758 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

FDBL9401-F085T6 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper biasing circuit to ensure optimal performance. A voltage regulator or a low-dropout regulator (LDO) can be used to regulate the input voltage.
  • The maximum allowed power dissipation for FDBL9401-F085T6 is 1.4W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • The device is rated for operation up to 150°C. However, the maximum junction temperature (TJ) should not exceed 150°C to ensure reliable operation. A heat sink or thermal management system may be required for high-temperature applications.
  • The device is sensitive to ESD. Handling the device by its pins or using an ESD wrist strap can help prevent damage. Anti-static packaging and storage are also recommended.

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FDBL9401-F085T6 Overview

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Part Image FDBL9401-F085 onsemi

Power Field-Effect Transistor, 300A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET