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FDC30N20DZ - onsemi

Description: High Performance Trench® Technology for Extremely Low rDS(on) ; Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 4.2 A ; Fast Switching Speed ; RoHS Compliant ; Max rDS(on) = 31 mΩ at VGS = 10 V, ID = 4.6 A ; 100% UIL Tested ; Typical CDM ESD protection level > 2.0 kV ( Note 5)

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PCB Footprints
FDC30N20DZ - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead*
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3D Models
FDC30N20DZ - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead*
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FDC30N20DZ Details

  • Manufacturer Part Number:

    FDC30N20DZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOT-23-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.6 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.96 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC30N20DZ Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDC30N20DZ is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and connect the source to ground through a resistor (e.g., 1 kΩ). This will provide a stable voltage reference for the device.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the device close to the power source and use a solid ground plane to reduce inductance. Avoid using vias or narrow traces near the device.
  • Use a voltage regulator to limit the voltage to the recommended maximum of 20 V. Add a current-limiting resistor or a fuse in series with the device to prevent overcurrent. Consider adding a TVS diode or a zener diode for overvoltage protection.
  • The thermal resistance of the FDC30N20DZ is 2.5°C/W. Ensure proper heat dissipation by using a heat sink with a thermal interface material, and design the PCB to allow for good airflow. Keep the device away from other heat sources and ensure good thermal conduction to the heat sink.

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FDC30N20DZ Overview

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