Part Image

FDC5612 - onsemi

Description: High performance trench technology for extremely low RDS(ON) ; Fast switching speed ; 4.3 A, 60 V. RDS(ON) = 0.055 Ω@ VGS = 10 V ; Low gate charge (12.5nC typical) ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) ; RDS(ON) = 0.064 Ω @ VGS = 6 V

Download FDC5612 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDC5612 - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
click to zoom
3D Models
FDC5612 - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
click to zoom

FDC5612 Details

  • Manufacturer Part Number:

    FDC5612

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC5612 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC5612 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it away from the device can help reduce EMI.
  • To ensure the FDC5612 operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to keep the junction temperature below the maximum rating.
  • A low-ESR ceramic capacitor with a value of 1-10uF is recommended for the input of the FDC5612. The capacitor should be placed close to the device and connected between the input pin and ground.
  • To troubleshoot issues with the FDC5612, start by checking the input voltage, output voltage, and output current. Verify that the device is properly connected and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use an oscilloscope to check for voltage ripple or oscillations.
  • Yes, the FDC5612 is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and meets the requirements for automotive applications. However, ensure that the device is used within its specified operating conditions and that the system design meets the required safety and reliability standards.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDC5612 Overview

Use the download button to access the FDC5612 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDC56, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDC5612

Showing 0 results

FDC5612 Alternates

Showing results

Image Part Number Model
Part Image FDC5612 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC5612_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC5612_NF073 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC5612T/R_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC5612D84Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDC5612, check out Findchips.com