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FDC5614P - onsemi

Description: RDS(on) = 0.105 Ω @ VGS = -10 V ; Fast switching speed ; High performance trench technology for extremely low RDS(ON) ; -3 A, -60 V ; RDS(on) = 0.135 Ω @ VGS = -4.5 V

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FDC5614P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SuperSOT-6
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FDC5614P Details

  • Manufacturer Part Number:

    FDC5614P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    TSOT-23, 6 PIN

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    39 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    56 ns

  • Turn-on Time-Max (ton):

    34 ns

FDC5614P Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC5614P involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it away from sensitive analog circuits can help reduce EMI.
  • To ensure the FDC5614P operates within its SOA, monitor the device's junction temperature, voltage, and current. Use thermal design and heat sinking to keep the junction temperature below 150°C. Also, ensure the input voltage is within the recommended range and the output current is within the specified limits.
  • When selecting an inductor for the FDC5614P, consider the inductor's saturation current, DC resistance, and core material. Choose an inductor with a saturation current higher than the peak current, low DC resistance to minimize power loss, and a core material that can handle the switching frequency.
  • To troubleshoot issues with the FDC5614P, start by checking the input voltage, output voltage, and current. Verify that the device is properly configured and that the PCB layout is correct. Use an oscilloscope to check for voltage ripple, ringing, or oscillations. Also, check the thermal design and heat sinking to ensure the device is operating within its SOA.
  • The FDC5614P is a high-current, low-voltage device with a unique feature set compared to other onsemi devices. It has a higher current rating and lower voltage rating than similar devices, making it suitable for specific applications. Compare the datasheets of similar devices to determine the best fit for your specific application.

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FDC5614P Overview

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For a full list of alternate parts for FDC5614P, check out Findchips.com