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FDC5661N_F085 - onsemi

Description: Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R

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FDC5661N_F085 Details

  • Manufacturer Part Number:

    FDC5661N_F085

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SMALL OUTLINE, R-PDSO-G6

  • Manufacturer Package Code:

    MA06A

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC5661N_F085 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and a thermal relief pattern on the top layer. This helps to dissipate heat efficiently. Additionally, it's recommended to have a minimum of 2 oz copper thickness and a thermal via array under the device to improve heat dissipation.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Additionally, use a stable voltage regulator to power the device, and decouple the power supply lines with capacitors to minimize noise and ripple.
  • Critical timing parameters to consider include the rise and fall times, propagation delay, and pulse width. Ensure that your design meets the recommended timing specifications to avoid signal integrity issues and ensure reliable operation.
  • To handle ESD protection, ensure that your PCB design includes ESD protection diodes or TVS diodes on the input and output pins. Additionally, follow proper handling and storage procedures to prevent ESD damage during manufacturing and assembly.
  • Recommended test and measurement procedures include using a high-speed oscilloscope to measure signal integrity, and a logic analyzer to verify digital signal timing. Additionally, use a thermal camera or thermocouple to measure device temperature during operation.

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FDC5661N_F085 Overview

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Part Image FDC5661N-F085 onsemi

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET