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FDD13AN06A0-F085 - onsemi

Description: UIS Capability (Single Pulse and Repetitive Pulse); Qualified to AEC Q101; Qg(tot) = 22nC (Typ.), VGS = 10V; rDS(ON) = 11.5mΩ (Typ.), VGS = 10V, ID = 50A; Low Miller Charge; Low QRR Body Diode ; RoHS Compliant

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FDD13AN06A0-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_11
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FDD13AN06A0-F085 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_11
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FDD13AN06A0-F085 Details

  • Manufacturer Part Number:

    FDD13AN06A0-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    56 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    9.9 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    77 ns

  • Turn-on Time-Max (ton):

    130 ns

FDD13AN06A0-F085 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FDD13AN06A0-F085 is a standard SOT-23 package with a 1.3mm x 1.3mm pad size, with a thermal pad on the bottom for heat dissipation.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1kΩ) and add a pull-down resistor (e.g., 10kΩ) from the gate to ground. This ensures the MOSFET is fully enhanced and minimizes power consumption.
  • The maximum SOA for FDD13AN06A0-F085 is defined by the voltage and current ratings: Vds ≤ 60V, Ids ≤ 13A, and Pd ≤ 1.5W. Operating within these limits ensures reliable operation and prevents damage to the device.
  • For high-power applications, ensure good thermal contact between the device and a heat sink or PCB with a thermal pad. Use thermal interface materials (e.g., thermal tape or paste) to minimize thermal resistance. A heat sink with a thermal resistance of ≤ 10°C/W is recommended.
  • The FDD13AN06A0-F085 has an internal ESD protection diode, but it's still recommended to follow standard ESD handling precautions when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe.

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