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FDD13AN06A0 - onsemi

Description: Qualified to AEC Q101; UIS Capability (Single Pulse and Repetitive Pulse); QG(tot) = 22nC (Typ.) @ VGS = 10V; Low Qrr Body Diode; RDS(on) = 11.5mΩ (Typ.) @ VGS = 10V, ID = 50A; Low Miller Charge

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PCB Footprints
FDD13AN06A0 - onsemi PCB footprint - Other - Other - TO-252 3L (DPAK)-2
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FDD13AN06A0 Details

  • Manufacturer Part Number:

    FDD13AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    56 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    9.9 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    77 ns

  • Turn-on Time-Max (ton):

    130 ns

FDD13AN06A0 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of FDD13AN06A0 is 150°C.
  • Yes, FDD13AN06A0 is suitable for high-frequency switching applications up to 1 MHz due to its low gate charge and low output capacitance.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
  • The recommended gate resistor value for FDD13AN06A0 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, FDD13AN06A0 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between devices.

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FDD13AN06A0 Overview

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Part Image FDD13AN06A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA