Part Image

FDD2572-F085 - onsemi

Description: Last Shipments - N-Channel PowerTrench MOSFET, 60V, 36A, 26mΩ

Download FDD2572-F085 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDD2572-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O__
click to zoom

FDD2572-F085 Details

  • Manufacturer Part Number:

    FDD2572-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD2572-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to facilitate heat dissipation.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure proper PCB design, component selection, and assembly to minimize thermal resistance.
  • Monitor the device's junction temperature, drain-source voltage, and drain current. Implement over-temperature, over-voltage, and over-current protection to prevent damage and ensure reliable operation.
  • Use a gate driver with a high current capability and a low output impedance. Ensure the gate drive circuit is properly decoupled and the PCB layout is optimized for minimal inductance and capacitance.
  • Implement ESD protection devices, such as TVS diodes or ESD arrays, on the drain and source pins. Ensure proper PCB design and layout to minimize ESD susceptibility.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDD2572-F085 Overview

Use the download button to access the FDD2572-F085 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like FDD25, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDD2572-F085

Showing 0 results

FDD2572-F085 Alternates

Showing results

Image Part Number Model
Part Image FDD2572 onsemi

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD2572 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD2572_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3

Part Image FDD2572_F085 onsemi

150V, 29A, 45mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL

Part Image FDD2572_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for FDD2572-F085, check out Findchips.com