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FDD2572 - onsemi

Description: Low Miller Charge ; Qg(tot) = 26nC (Typ.), VGS = 10V ; UIS Capability (Single Pulse and Repetitive Pulse) ; Low QRR Body Diode ; rDS(ON) = 45mΩ(Typ.), VGS = 10V, ID = 9A

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PCB Footprints
FDD2572 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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3D Models
FDD2572 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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FDD2572 Details

  • Manufacturer Part Number:

    FDD2572

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD2572 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (Tj) and ensure it stays within the recommended operating range.
  • A 10-22 μF, X7R or X5R ceramic capacitor is recommended for the input filter. The capacitor should be placed as close as possible to the device's input pins.
  • Use a shielded enclosure, keep the PCB layout compact, and use a common-mode choke or ferrite bead on the input lines. Ensure proper grounding and decoupling of the device.
  • The maximum allowed voltage drop is 0.5 V. Ensure the input voltage is within the recommended range, and the output voltage is within the specified regulation tolerance.

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FDD2572 Overview

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Part Image FDD2572 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD2572_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3

Part Image FDD2572-F085 onsemi

N-Channel PowerTrench® MOSFET, 150V, 29A, 54mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified

Part Image FDD2572_F085 onsemi

150V, 29A, 45mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL

Part Image FDD2572_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for FDD2572, check out Findchips.com