Part Image

FDD4141 - onsemi

Description: RoHS Compliant ; High performance trench technology for extremely low RDS(on) ; Maximum RDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A ; Maximum RDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A

Download FDD4141 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDD4141 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
click to zoom
3D Models
FDD4141 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
click to zoom

FDD4141 Details

  • Manufacturer Part Number:

    FDD4141

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252, DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    337 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0123 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    310 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    87 ns

  • Turn-on Time-Max (ton):

    32 ns

FDD4141 Frequently Asked Questions (FAQs)

  • The FDD4141 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the gate pin to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to filter out noise and ensure stable operation.
  • The recommended gate drive voltage for the FDD4141 is between 10 V and 15 V, with a maximum gate-source voltage of 20 V.
  • Use a voltage regulator to limit the voltage supply to the FDD4141, and consider adding overcurrent protection devices such as fuses or current-sensing resistors to prevent damage from excessive current.
  • The maximum allowable power dissipation for the FDD4141 is 150 W, but this can be affected by factors such as ambient temperature, thermal resistance, and heat sinking. Ensure proper thermal management to prevent overheating.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDD4141 Overview

Use the download button to access the FDD4141 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDD41, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDD4141

Showing 0 results

FDD4141 Alternates

Showing results

Image Part Number Model
Part Image FDD4141-F085 onsemi

P-Channel PowerTrench® MOSFET, -40V, -50A, 12.3mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified

Part Image FDD4141_F085 onsemi

-40V, -12.7A, 12.3mΩ, DPAK P-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL

Part Image FDD4141-F085P onsemi

Power Field-Effect Transistor, 50A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252