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FDD5612 - onsemi

Description: N-Channel 60 V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252AA 660 pF @ 30 V -55°C ~ 175°C (TJ)

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PCB Footprints
FDD5612 - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-6.1
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3D Models
FDD5612 - onsemi  - 3D model - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-6.1
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FDD5612 Details

  • Manufacturer Part Number:

    FDD5612

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD5612 Frequently Asked Questions (FAQs)

  • The FDD5612 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage is within the recommended range (typically 10-20 V).
  • Use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the heat sink. A copper pour or thermal vias can help reduce thermal resistance.
  • Yes, the FDD5612 can be used in switching applications, but be aware of the maximum switching frequency (typically 100 kHz) and ensure the device is properly biased to avoid overheating.
  • Use ESD protection devices, such as TVS diodes or ESD protection arrays, and follow proper handling and storage procedures to prevent ESD damage.

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FDD5612 Overview

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Part Image FDD5612_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252