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FDD5N50NZTM - onsemi

Description: N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω,-55 to +150 oC

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FDD5N50NZTM - onsemi PCB footprint - Other - Other - D-PAK_2025
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FDD5N50NZTM - onsemi  - 3D model - Other - D-PAK_2025
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FDD5N50NZTM Details

  • Manufacturer Part Number:

    FDD5N50NZTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    61 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    304 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD5N50NZTM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD5N50NZTM is -55°C to 150°C.
  • To ensure proper biasing, the FDD5N50NZTM requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) between 10V and 500V.
  • The recommended gate resistor value for the FDD5N50NZTM is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the FDD5N50NZTM from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding a current sense resistor and a fuse or a current limiter.
  • The maximum allowable power dissipation for the FDD5N50NZTM is 150W, but this value can be derated based on the operating temperature and other factors.

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FDD5N50NZTM Overview

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