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FDD6670A - onsemi

Description: Low gate charge ; Fast switching speed ; RDS(on) = 10 mΩ @ VGS = 4.5 V ; RDS(on) = 8 mΩ @ VGS = 10 V ; High performance trench technology for extremely low RDS(on); 66 A, 30 V

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PCB Footprints
FDD6670A - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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FDD6670A - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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FDD6670A Details

  • Manufacturer Part Number:

    FDD6670A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    67 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD6670A Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the FDD6670A, the SOA is limited by the maximum voltage (Vds) of 60V, maximum current (Id) of 20A, and maximum power dissipation (Pd) of 100W.
  • Use ESD-sensitive handling procedures, such as grounding wrist straps and using ESD-protective packaging. Also, ensure that the device is properly connected to a ground plane during PCB assembly.
  • A non-inverting gate drive circuit with a voltage regulator and a gate resistor is recommended. The gate drive voltage should be between 10V and 15V, and the gate resistor should be around 10 ohms.

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FDD6670A Overview

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Part Image FDD6670A Rochester Electronics LLC

15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FDD6670A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 15A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252