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FDD6690A - onsemi

Description: Fast switching speed ; Low gate charge ; High performance trench technology for extremely low RDS(on) ; RDS(on) = 14 mΩ @ VGS = 4.5 V ; RDS(on) = 12 mΩ @ VGS = 10 V ; 46 A, 30 V

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PCB Footprints
FDD6690A - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD6690A - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD6690A Details

  • Manufacturer Part Number:

    FDD6690A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD6690A Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and a bias circuit to set the quiescent current. A resistor divider network can be used to set the bias voltage, and a capacitor can be added to filter out noise.
  • The maximum SOA is typically defined by the device's voltage and current ratings. For the FDD6690A, the maximum voltage rating is 100V and the maximum current rating is 10A. Operating the device within these limits ensures safe and reliable operation.
  • ESD protection can be achieved by using ESD protection diodes, such as the onsemi ESD1100, and following proper handling and storage procedures. A grounded wrist strap or anti-static mat can also be used to prevent ESD damage.
  • The device should be stored in a dry, cool place, away from direct sunlight and moisture. Handling should be done with anti-static precautions, such as using a grounded wrist strap or anti-static mat, to prevent ESD damage.

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FDD6690A Overview

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Part Image FDD6690A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FDD6690A_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252