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FDD6N50TM - onsemi

Description: Low Crss (Typ. 9 pF); Low gate charge (Typ. 12.8 nC); Improved dv/dt capability; RDS(on) = 900mΩ (Max.) @ VGS = 10V, ID = 3A; 100% avalanche tested

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FDD6N50TM - onsemi PCB footprint - Other - Other - FDD6N50TM
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FDD6N50TM Details

  • Manufacturer Part Number:

    FDD6N50TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD6N50TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD6N50TM is -55°C to 150°C.
  • To ensure proper biasing, the FDD6N50TM requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 500V. Additionally, a gate resistor (Rg) between 1kΩ and 10kΩ is recommended to prevent oscillations.
  • The maximum current rating for the FDD6N50TM is 6A, with a pulsed current rating of 12A.
  • To protect the FDD6N50TM from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded. Additionally, use ESD-sensitive handling procedures and storage containers.
  • For optimal performance, use a PCB layout with a solid ground plane, and keep the drain and source pins as close as possible to minimize inductance. Use a wide, low-impedance path for the drain and source connections, and avoid routing high-frequency signals near the device.

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FDD6N50TM Overview

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