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FDD86102 - onsemi

Description: High power and current handling capability in a widely used surface mount package ; High performance trench technology for extremely low rDS(on) ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A ; Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A ; Very low Qg and Qgd compared to competing trench technologies; Fast switching speed

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PCB Footprints
FDD86102 - onsemi PCB footprint - Other - Other - FDD86102-2
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3D Models
FDD86102 - onsemi  - 3D model - Other - FDD86102-2
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FDD86102 Details

  • Manufacturer Part Number:

    FDD86102

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD86102 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 18V) and VBIAS is set to 5V ± 10%.
  • The FDD86102 can handle a maximum current of 2A per channel, but it's recommended to derate the current to 1.5A per channel for reliable operation.
  • Use a voltage regulator to regulate the input voltage and add overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.
  • The FDD86102 is designed to operate at frequencies up to 100 kHz, but it can be used at higher frequencies with proper PCB layout and component selection.

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FDD86102 Overview

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