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FDD86250 - onsemi

Description: N-Channel Shielded Gate PowerTrench ® MOSFET 150 V, 51 A, 22 m Ω D-PAK TO-252

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FDD86250 - onsemi PCB footprint - Other - Other - D-PAK(TO-252)_2025
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FDD86250 - onsemi  - 3D model - Other - D-PAK(TO-252)_2025
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FDD86250 Details

  • Manufacturer Part Number:

    FDD86250

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    132 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD86250 Frequently Asked Questions (FAQs)

  • The FDD86250 can operate up to 1 GHz, making it suitable for high-frequency applications.
  • To ensure stability, it's essential to follow the recommended PCB layout guidelines, use a low-ESR output capacitor, and decouple the input voltage with a capacitor.
  • The FDD86250 can handle input voltages up to 18V, but it's recommended to operate within the specified range of 4.5V to 15V for optimal performance.
  • To minimize power consumption, use a low-input voltage, reduce the switching frequency, and optimize the output voltage and current according to your application's requirements.
  • The FDD86250 is rated for operation up to 150°C, but it's essential to consider the thermal design and heat dissipation in your application to ensure reliable operation.

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FDD86250 Overview

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Part Image FDD86250_F085 onsemi

Power Field-Effect Transistor, 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA