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FDD8874 - onsemi

Description: Last Shipments - N-Channel PowerTrench MOSFET 30V, 73A, 8.2mΩ

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FDD8874 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FDD8874 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FDD8874 Details

  • Manufacturer Part Number:

    FDD8874

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD8874 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDD8874 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the input and output capacitors close to the device. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDD8874 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, select a low-ESR input capacitor and a high-efficiency inductor to minimize power losses. Furthermore, consider using a low-voltage, low-power mode for the controller IC.
  • The FDD8874 has a thermal pad that must be connected to a thermal plane on the PCB to dissipate heat efficiently. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink if necessary. Also, keep the device away from other heat sources and ensure good airflow around the device.
  • To troubleshoot the FDD8874, start by verifying the input voltage, output voltage, and current sense resistor values. Check the EN pin voltage and the switching frequency. Use an oscilloscope to inspect the waveforms at the SW pin, output voltage, and input voltage. Consult the datasheet and application notes for specific troubleshooting guidelines.
  • When selecting input and output capacitors for the FDD8874, consider the voltage rating, capacitance value, ESR, and ripple current rating. Choose capacitors with low ESR and high ripple current ratings to minimize power losses and ensure stable operation. Ensure the capacitors are rated for the maximum input voltage and output voltage.

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FDD8874 Overview

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Part Image FDD8874 Rochester Electronics LLC

35A, 30V, 0.0064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3

Part Image FDD8874 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 35A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA