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FDD8880 - onsemi

Description: RDS(ON) = 12 mΩ @ VGS = 4.5V @ ID = 35A; RDS(ON) = 9 mΩ @ VGS = 10V @ ID = 35A; High performance trench technology for extremely low rDS(ON); Low gate charge; High power and current handling capability

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PCB Footprints
FDD8880 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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3D Models
FDD8880 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD8880 Details

  • Manufacturer Part Number:

    FDD8880

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    53 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    108 ns

  • Turn-on Time-Max (ton):

    147 ns

FDD8880 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-frequency traces short and away from the edges of the board. Use a common mode choke and ferrite beads to filter the input and output lines.
  • To minimize standby power consumption, ensure that the EN pin is driven low during shutdown. Also, disconnect the input voltage from the device when not in use. Additionally, consider using a low-dropout regulator to power the FDD8880.
  • The maximum allowed voltage on the VIN pin is 30V, but it's recommended to keep it below 28V to ensure reliable operation and to prevent damage to the device.
  • Check the input voltage, ensure the EN pin is high, and verify that the output voltage is within the specified range. Also, check for any short circuits or overloads on the output. Use an oscilloscope to verify the switching frequency and waveform.
  • The FDD8880 is rated for operation up to 125°C, but the device's performance and reliability may degrade at high temperatures. Ensure proper thermal management, such as using a heat sink, to maintain a safe operating temperature.

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FDD8880 Overview

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FDD8880 Alternates

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Image Part Number Model
Part Image FDD8880 Rochester Electronics LLC

35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3

Part Image ISL9N310AD3ST Rochester Electronics LLC

35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Image FDD8880 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image ISL9N310AD3ST Intersil Corporation

Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD8880_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for FDD8880, check out Findchips.com