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FDFMA3N109 - onsemi

Description: Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

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PCB Footprints
FDFMA3N109 - onsemi PCB footprint - Other - Other - WDFN6 2x2, 0.65P CASE 511DA ISSUE O_1
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3D Models
FDFMA3N109 - onsemi  - 3D model - Other - WDFN6 2x2, 0.65P CASE 511DA ISSUE O_1
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FDFMA3N109 Details

  • Manufacturer Part Number:

    FDFMA3N109

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-6

  • Package Description:

    2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6

  • Manufacturer Package Code:

    511DA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.9 A

  • Drain-source On Resistance-Max:

    0.123 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDFMA3N109 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDFMA3N109 is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout and thermal management guidelines in the datasheet.
  • To prevent ESD damage, handle the device by the body or pins, avoid touching the pins or die, and use an ESD wrist strap or mat when handling the device.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device with care, avoiding bending, flexing, or twisting the leads.

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FDFMA3N109 Overview

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Part Image FDFMA3N109 Rochester Electronics LLC

2900mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6

Part Image FDFMA3N109 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET