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FDFS2P106A - onsemi

Description: RDS(on) = 110 mΩ@ VGS = -10 V ; RDS(on) = 140 mΩ @ VGS = -4.5 V ; VF < 0.62 V @ 2 A ; -3.0A, -60 V ; VF < 0.53 V @ 1 A ; Schottky and MOSFET incorporated into singlepower surface mount SO-8 package; Electrically independent Schottky and MOSFETpinout for design flexibility ; VF < 0.45 V @ 1 A (TJ = 125°C)

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FDFS2P106A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE751EB
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FDFS2P106A - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE751EB
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FDFS2P106A Details

  • Manufacturer Part Number:

    FDFS2P106A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    66 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDFS2P106A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDFS2P106A is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 10-15V.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the FDFS2P106A close to the power source. Avoid using vias or narrow traces near the device.
  • Use a voltage regulator or a zener diode to limit the voltage, and add a current-limiting resistor or a fuse to prevent overcurrent conditions.
  • Store the FDFS2P106A in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid touching the leads to prevent electrostatic discharge.

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FDFS2P106A Overview

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Part Image FDFS2P106AL86Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET