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FDFS2P753Z - onsemi

Description: Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A; VF < 500mV @ 1A; VF < 580mV @ 2A; Schottky and MOSFET incorporated into single power surface mount S0-8 package; Electrically independent Schottky and MOSFET pinout for design flexibility; RoHS Compliant; Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A

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FDFS2P753Z - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE751EB
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FDFS2P753Z - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE751EB
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FDFS2P753Z Details

  • Manufacturer Part Number:

    FDFS2P753Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    6 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.162 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

FDFS2P753Z Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure the device is soldered within the recommended temperature range to prevent damage.
  • Handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure all equipment and personnel are grounded. Implement ESD protection circuits in the system design if necessary.
  • Use a low-ESR ceramic capacitor with a value of 10-22 μF and a voltage rating of 25-50 V. The capacitor should be placed as close as possible to the device's input pins.

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FDFS2P753Z Overview

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