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FDMA1029PZ - onsemi

Description: Low profile ?0.8 mm maximum ?in the new packageMicroFET 2x2 mm; HBM ESD protection level > 2.5kV (see datasheet Note 3); RDS(ON) = 141 mΩ @ VGS = -2.5V; -3.1 A, -20V; RoHS Compliant; RDS(ON) = 95 mΩ @ VGS = -4.5V; Free from halogenated compounds and antimony oxides

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PCB Footprints
FDMA1029PZ - onsemi PCB footprint - Other - Other - FDMA1029PZ-1
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FDMA1029PZ - onsemi  - 3D model - Other - FDMA1029PZ-1
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FDMA1029PZ Details

  • Manufacturer Part Number:

    FDMA1029PZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-6

  • Package Description:

    MICROFET-6

  • Manufacturer Package Code:

    511DA

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-229VCCC

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMA1029PZ Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMA1029PZ involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the power supply decoupling capacitors. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.
  • To ensure proper biasing, make sure to connect the VCC pin to a stable voltage source, and the VEE pin to a stable negative voltage source or ground. The recommended bias voltage is VCC = 5V and VEE = -5V. Also, ensure that the input signals are within the recommended common-mode voltage range.
  • The maximum power dissipation of the FDMA1029PZ is 1.4W. To ensure reliable operation, it's recommended to keep the junction temperature below 150°C. You can calculate the power dissipation using the formula: Pd = (VCC x ICC) + (VEE x IEE), where ICC and IEE are the quiescent currents.
  • The FDMA1029PZ has built-in ESD protection, but it's still recommended to take precautions during handling and assembly. Use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube. During PCB assembly, use an ESD-safe workstation and follow proper handling procedures.
  • The recommended operating temperature range for the FDMA1029PZ is -40°C to 125°C. However, the device can operate up to 150°C junction temperature. It's essential to ensure that the device is operated within the recommended temperature range to ensure reliable operation and to prevent thermal shutdown.

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FDMA1029PZ Overview

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Part Image FDMA1029PZ Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC