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FDMA3023PZ - onsemi

Description: Max rDS(on) = 170 mmΩ at VGS = -1.8 V, ID = -1.7 A; HBM ESD protection level > 2 kV (Note 3); RoHS Compliant; Max rDS(on) = 240 mmΩ at VGS = -1.5 V, ID = -1.0 A; Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A; Max rDS(on)= 130 mmΩ at VGS = -2.5 V, ID = -2.6 A; Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

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FDMA3023PZ - onsemi PCB footprint - Other - Other - FDMA3023PZ-2
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FDMA3023PZ - onsemi  - 3D model - Other - FDMA3023PZ-2
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FDMA3023PZ Details

  • Manufacturer Part Number:

    FDMA3023PZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-6

  • Package Description:

    2 X 2 MM HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6

  • Manufacturer Package Code:

    511DA

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.9 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JEDEC-95 Code:

    MO-229

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMA3023PZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) between 4.5V to 18V, and a bias voltage (VBIAS) between 2.5V to 5.5V. Ensure the input voltage is decoupled with a 10uF capacitor, and the bias voltage is decoupled with a 1uF capacitor.
  • The maximum power dissipation of the FDMA3023PZ is 2.5W. Ensure the device is properly heat-sunk and the ambient temperature is within the recommended operating range to prevent overheating.
  • Use a voltage regulator to regulate the input voltage, and consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.
  • The FDMA3023PZ is designed to operate at frequencies up to 1GHz. However, the optimal operating frequency range depends on the specific application and should be determined through characterization and testing.

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FDMA3023PZ Overview

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