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FDMA507PZ - onsemi

Description: RoHS Compliant ; Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A ; HBM ESD protection level > 3.2K V typical (Note3) ; Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A ; Low Profile - 0.8 mm maximum - in the package MicroFET2X2 mm ; Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A

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PCB Footprints
FDMA507PZ - onsemi PCB footprint - Other - Other - FDMA507PZ-1
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FDMA507PZ - onsemi  - 3D model - Other - FDMA507PZ-1
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FDMA507PZ Details

  • Manufacturer Part Number:

    FDMA507PZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-6

  • Package Description:

    2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6

  • Manufacturer Package Code:

    511DB

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    7.8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    360 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    461 ns

  • Turn-on Time-Max (ton):

    38 ns

FDMA507PZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the FDMA507PZ, the SOA is limited by the maximum voltage rating of 60V, maximum current rating of 4.5A, and maximum power rating of 20W.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the device in an ESD-safe environment. Also, consider adding ESD protection circuits to the PCB design.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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FDMA507PZ Overview

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Part Image FDMA510PZ onsemi

Power Field-Effect Transistor, 7.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET