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FDMA905P - onsemi

Description: Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A ; Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A ; Low profile - 0.8 mm maximum - in the new package MicroFET 2X2 mm ; RoHS Compliant ; Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.5 A ; Free from halogenated compounds and antimony oxides

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FDMA905P Details

  • Manufacturer Part Number:

    FDMA905P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-6

  • Package Description:

    DFN-6

  • Manufacturer Package Code:

    511CZ

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    655 pF

  • JESD-30 Code:

    S-PBCC-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    286 ns

  • Turn-on Time-Max (ton):

    40 ns

FDMA905P Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMA905P involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the antenna. A 4-layer PCB with a dedicated ground plane is recommended.
  • The FDMA905P requires a stable voltage supply of 2.7V to 5.5V. Ensure that the voltage regulator is capable of providing a clean and stable output, and that the decoupling capacitors are placed close to the device. A 10uF capacitor in parallel with a 100nF capacitor is recommended for decoupling.
  • The maximum transmit power of the FDMA905P is +20dBm. However, the actual transmit power may vary depending on the antenna design, PCB layout, and operating frequency.
  • The FDMA905P has a shutdown pin (SHDN) that can be used to put the device in a low-power mode. When the SHDN pin is pulled low, the device enters a low-power state, reducing the current consumption to less than 1uA.
  • A quarter-wavelength monopole antenna or a dipole antenna with a length of approximately 1/4 wavelength is recommended for optimal performance with the FDMA905P. The antenna should be matched to the device's output impedance of 50 ohms.

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FDMA905P Overview

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Part Image FDMA905P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET