FDMA9 Model Download Search Results
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FDMA910PZ
onsemi
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1 | Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A ; RoHS Compliant ; Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A ; HBM ESD protection level > 2.8k V typical (Note 3) ; Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A | Other | FDMA910PZ |
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FDMA908PZ
onsemi
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1 | Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A ; Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm ; Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A ; Free from halogenated compounds and antimony oxides ; RoHS Compliant ; Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A ; HBM ESD protection level > 2.8 kV typical (Note 3) | Other | FDMA908PZ |
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FDMA908PZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 12A I(D), 12V, 0.0125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA908PZ |
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FDMA905P
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA905P |
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FDMA910PZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 9.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMA910PZ |
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FDMA905P
onsemi
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1 | Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A ; Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A ; Low profile - 0.8 mm maximum - in the new package MicroFET 2X2 mm ; RoHS Compliant ; Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.5 A ; Free from halogenated compounds and antimony oxides | FDMA905P |
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