SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
67 A
Drain-source On Resistance-Max:
0.0058 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
50 pF
JESD-30 Code:
R-PDSO-N12
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
12
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
44 W
Pulsed Drain Current-Max (IDM):
304 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
94 ns
Turn-on Time-Max (ton):
41 ns
FDMD8260LET60 Frequently Asked Questions (FAQs)
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal performance.
The FDMD8260LET60 requires a specific biasing scheme to operate within its recommended operating conditions. Ensure that the VCC and VEE pins are properly biased, and the device is operated within the recommended voltage and current ranges. Consult the datasheet and application notes for specific biasing requirements.
To minimize EMI and noise, keep the device's power and ground pins as close as possible to the device, use a solid ground plane, and avoid routing high-frequency signals near the device. Additionally, use shielding and filtering techniques, such as ferrite beads and capacitors, to reduce EMI and noise.
The FDMD8260LET60 has a built-in thermal shutdown feature that activates when the device exceeds its maximum junction temperature. To handle this feature, ensure that your system design includes thermal monitoring and shutdown capabilities to prevent damage to the device.
Use a combination of DC and AC measurements, such as voltage and current measurements, to characterize the device's performance. Use a high-impedance probe and a low-capacitance probe to minimize loading effects. Consult the datasheet and application notes for specific measurement techniques and recommendations.
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FDMD8260LET60 Overview
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