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FDMD8430 - onsemi

Description: Lifetime - Dual N-Channel PowerTrench MOSFET 40V, 87A, 2.6mΩ

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PCB Footprints
FDMD8430 - onsemi PCB footprint - Other - Other - PQFN8 3.3X5, 0.65P CASE 483AU ISSUE A
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3D Models
FDMD8430 - onsemi  - 3D model - Other - PQFN8 3.3X5, 0.65P CASE 483AU ISSUE A
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FDMD8430 Details

  • Manufacturer Part Number:

    FDMD8430

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AU

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    96 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.00212 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    160 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.1 W

  • Power Dissipation-Max (Abs):

    29 W

  • Pulsed Drain Current-Max (IDM):

    562 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    150 ns

  • Turn-on Time-Max (ton):

    36 ns

FDMD8430 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMD8430 should ensure that the input and output tracks are well-separated, and that the device is placed close to the input and output connectors. Additionally, a solid ground plane and a low-impedance power supply are recommended to minimize noise and ensure stable operation.
  • The FDMD8430 requires a bias voltage of 5V on the VCC pin, and the input signals should be biased around 2.5V. It's also important to ensure that the input signals are properly terminated to prevent reflections and ensure signal integrity.
  • The FDMD8430 is specified to operate up to 3.2 GHz, but it can be used at higher frequencies with some degradation in performance. However, it's recommended to consult with onsemi's application engineers for specific guidance on using the device at frequencies above 3.2 GHz.
  • The FDMD8430 has a maximum junction temperature of 150°C, and it's recommended to keep the device temperature below 125°C for optimal performance and reliability. A heat sink or thermal pad can be used to dissipate heat, and the device should be placed in a well-ventilated area to prevent overheating.
  • The recommended input signal amplitude for the FDMD8430 is between 100 mVpp and 1 Vpp. Signals with amplitudes outside this range may not be properly amplified or may cause the device to saturate.

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FDMD8430 Overview

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