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FDMD85100 - onsemi

Description: Termination is Lead-free and RoHS Compliant ; 100% UIL tested ; Q2: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A ; Kelvin High Side MOSFET drive pin-out capability ; Ideal for flexible layout in primary side of bridge topology ; Q1: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A

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Symbol
FDMD85100 - onsemi - PCB symbol
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PCB Footprints
FDMD85100 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE B
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3D Models
FDMD85100 - onsemi - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE B
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FDMD85100 Details

  • Manufacturer Part Number:

    FDMD85100

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    294 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.0099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    261 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    35 ns

FDMD85100 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMD85100 involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the load. It's also recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.
  • To ensure proper biasing, make sure to connect the VCC pin to a stable 5V power supply, and the EN pin to a logic-level signal (e.g. 0V or 5V). Also, ensure that the input voltage (VIN) is within the recommended range of 2.5V to 5.5V.
  • The FDMD85100 can handle a maximum continuous current of 1A, and a peak current of 2A for a short duration (less than 10ms). Exceeding these limits may cause the device to overheat or fail.
  • To protect the FDMD85100 from overvoltage and overcurrent conditions, consider adding external protection components such as a voltage regulator, a current limiter, and a fuse. Additionally, ensure that the device is operated within the recommended operating conditions.
  • To manage the thermal performance of the FDMD85100, ensure good airflow around the device, use a heat sink if necessary, and avoid blocking the thermal pads on the package. The device has a thermal shutdown feature that will turn off the device if the junction temperature exceeds 150°C.

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FDMD85100 Overview

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