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FDMD8530 - onsemi

Description: Last Shipments - Dual N-Channel PowerTrench MOSFET 40V, 156A, 1.5mΩ

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PCB Footprints
FDMD8530 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE O-1
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FDMD8530 Details

  • Manufacturer Part Number:

    FDMD8530

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    661 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    201 A

  • Drain-source On Resistance-Max:

    0.00125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    310 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    1047 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    148 ns

  • Turn-on Time-Max (ton):

    49 ns

FDMD8530 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMD8530 involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure proper biasing, the FDMD8530 requires a stable voltage supply, typically between 2.7V to 5.5V. The device also requires a bias resistor (RBIAS) connected between the VCC pin and the input pin to set the quiescent current. The recommended RBIAS value is 220kΩ.
  • The maximum power dissipation of the FDMD8530 is 250mW. It's essential to ensure that the device operates within this limit to prevent overheating and damage.
  • To protect the FDMD8530 from ESD damage, it's recommended to use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output lines. Additionally, handling the device by its package and avoiding direct contact with the pins can help prevent ESD damage.
  • The recommended operating temperature range for the FDMD8530 is -40°C to 85°C. Operating the device outside this range may affect its performance and reliability.

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FDMD8530 Overview

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